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Multilevel Programming Reliability in Si-doped GeSbTe for Storage Class Memory.

, , , , , , , , , и . IRPS, стр. 1-6. IEEE, (2021)

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Niccolò Tosi

Niccolo Lazzarini

Ottmar Castellani

Christopher Castellani

Michela Castellani

 

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Experimental Demonstration of Multilevel Resistive Random Access Memory Programming for up to Two Months Stable Neural Networks Inference Accuracy., , , , , , и . Adv. Intell. Syst., (2022)Integration of HfO2-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory., , , , , , , , , и 5 other автор(ы). ESSDERC, стр. 117-120. IEEE, (2023)Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability., , , , , , , , , и . IRPS, стр. 1-6. IEEE, (2023)Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations., , , , , , , , , и . IRPS, стр. 8-1. IEEE, (2022)A novel 3D 1T1R RRAM architecture for memory-centric Hyperdimensional Computing., , , , , , , , , и . IMW, стр. 1-4. IEEE, (2022)Multilayer OTS Selectors Engineering for High Temperature Stability, Scalability and High Endurance., , , , , , , , , и 7 other автор(ы). IMW, стр. 1-4. IEEE, (2021)Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate., , , , , , , , , и 7 other автор(ы). IMW, стр. 1-4. IEEE, (2022)Data regeneration and disturb immunity of T-RAM cells., , , , , , , , и . ESSDERC, стр. 46-49. IEEE, (2014)Metal Oxide Resistive Memory (OxRAM) and Phase Change Memory (PCM) as Artificial Synapses in Spiking Neural Networks., , , , , , , , , и . ICECS, стр. 561-564. IEEE, (2018)TCAD modeling of performance and reliability of nano-scale memory devices.. Polytechnic University of Milan, Italy, (2014)