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A 146-mm2 8-gb multi-level NAND flash memory with 70-nm CMOS technology., , , , , , , , , and 15 other author(s). IEEE J. Solid State Circuits, 41 (1): 161-169 (2006)A 44-mm2 four-bank eight-word page-read 64-Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller., , , , , , , , , and 4 other author(s). IEEE J. Solid State Circuits, 37 (11): 1485-1492 (2002)A 56-nm CMOS 99-mm2 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput., , , , , , , , , and 25 other author(s). IEEE J. Solid State Circuits, 42 (1): 219-232 (2007)A 113mm2 32Gb 3b/cell NAND flash memory., , , , , , , , , and 28 other author(s). ISSCC, page 242-243. IEEE, (2009)A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput., , , , , , , , , and 25 other author(s). ISSCC, page 507-516. IEEE, (2006)A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology., , , , , , , , , and 32 other author(s). ISSCC, page 198-199. IEEE, (2011)A 151-mm2 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology., , , , , , , , , and 32 other author(s). IEEE J. Solid State Circuits, 47 (1): 75-84 (2012)A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology., , , , , , , , , and 42 other author(s). ISSCC, page 218-220. IEEE, (2019)30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology., , , , , , , , , and 49 other author(s). ISSCC, page 428-430. IEEE, (2021)