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A 56-nm CMOS 99-mm2 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput., , , , , , , , , and 25 other author(s). IEEE J. Solid State Circuits, 42 (1): 219-232 (2007)A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate., , , , , , , , , and 38 other author(s). IEEE J. Solid State Circuits, 44 (1): 195-207 (2009)A 34MB/s-Program-Throughput 16Gb MLC NAND with All-Bitline Architecture in 56nm., , , , , , , , , and 33 other author(s). ISSCC, page 420-421. IEEE, (2008)A 113mm2 32Gb 3b/cell NAND flash memory., , , , , , , , , and 28 other author(s). ISSCC, page 242-243. IEEE, (2009)A 146-mm2 8-gb multi-level NAND flash memory with 70-nm CMOS technology., , , , , , , , , and 15 other author(s). IEEE J. Solid State Circuits, 41 (1): 161-169 (2006)A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology., , , , , , , , , and 33 other author(s). IEEE J. Solid State Circuits, 44 (1): 186-194 (2009)A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate., , , , , , , , , and 38 other author(s). ISSCC, page 506-507. IEEE, (2008)A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology., , , , , , , , , and 27 other author(s). ISSCC, page 430-431. IEEE, (2008)A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput., , , , , , , , , and 25 other author(s). ISSCC, page 507-516. IEEE, (2006)A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface., , , , , , , , , and 45 other author(s). ISSCC, page 422-424. IEEE, (2012)