%0 Journal Article %1 9225002 %A Lederer, Maximilian %A Müller, Franz %A Kühnel, Kati %A Olivo, Ricardo %A Mertens, Konstantin %A Trentzsch, Martin %A Dünkel, Stefan %A Müller, Johannes %A Beyer, Sven %A Seidel, Konrad %A Kämpfe, Thomas %A Eng, Lukas M. %D 2020 %J IEEE Electron Device Letters %K b %N 12 %P 1762-1765 %R 10.1109/LED.2020.3031308 %T Integration of hafnium oxide on epitaxial SiGe for p-type ferroelectric FET application %U https://ieeexplore.ieee.org/document/9225002 %V 41

@article{9225002, added-at = {2023-11-13T12:28:46.000+0100}, author = {Lederer, Maximilian and Müller, Franz and Kühnel, Kati and Olivo, Ricardo and Mertens, Konstantin and Trentzsch, Martin and Dünkel, Stefan and Müller, Johannes and Beyer, Sven and Seidel, Konrad and Kämpfe, Thomas and Eng, Lukas M.}, biburl = {https://www.bibsonomy.org/bibtex/2efe2b972562610fe83c314300a20ee6d/ctqmat}, day = 15, doi = {10.1109/LED.2020.3031308}, interhash = {08d9fe32cc56f3c47d89ebfcabd7a7c5}, intrahash = {efe2b972562610fe83c314300a20ee6d}, journal = {IEEE Electron Device Letters}, keywords = {b}, month = {10}, number = 12, pages = {1762-1765}, timestamp = {2023-11-13T12:28:46.000+0100}, title = {Integration of hafnium oxide on epitaxial SiGe for p-type ferroelectric FET application}, url = {https://ieeexplore.ieee.org/document/9225002}, volume = 41, year = 2020 }