( en | de | ru )

 

Disambiguation of "Lederer, Maximilian"

Author of the publication

copydeleteadd this publication to your clipboard
Integration of hafnium oxide on epitaxial SiGe for p-type ferroelectric FET application

, , , , , , , , , , , and . IEEE Electron Device Letters, 41 (12): 1762-1765 (Oct 15, 2020)
DOI: 10.1109/LED.2020.3031308

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Maximilian Lederer

Marijan-Maximilian Lederer

Falk Lederer

Konrad Lederer

Felix Lederer

 

Other publications of authors with the same name

Integration of hafnium oxide on epitaxial SiGe for p-type ferroelectric FET application, , , , , , , , , and 2 other author(s). IEEE Electron Device Letters, 41 (12): 1762-1765 (Oct 15, 2020)Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications., , , , , , , , , and 3 other author(s). IMW, page 1-4. IEEE, (2023)Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells., , , , , , , , , and 9 other author(s). IRPS, page 1-9. IEEE, (2020)Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability., , , , , , , , , and 7 other author(s). IMW, page 1-4. IEEE, (2022)Efficient FeFET Crossbar Accelerator for Binary Neural Networks., , , , , , , and . ASAP, page 109-112. IEEE, (2020)An Ultracompact Single-Ferroelectric Field-Effect Transistor Binary and Multibit Associative Search Engine., , , , , , , , , and 7 other author(s). Adv. Intell. Syst., (July 2023)Demonstration of Differential Mode Ferroelectric Field-Effect Transistor Array-Based in-Memory Computing Macro for Realizing Multiprecision Mixed-Signal Artificial Intelligence Accelerator., , , , , , , , , and 8 other author(s). Adv. Intell. Syst., (June 2023)Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applications., , , , , , , , and . ESSDERC, page 113-116. IEEE, (2023)Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?, , , , , , , , , and . IMW, page 1-4. IEEE, (2023)Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology., , , , , , , , , and 6 other author(s). IMW, page 1-4. IEEE, (2022)