A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-off Operation, High Mobility and Reliability for 3D Integrated Devices.
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%0 Conference Paper
%1 conf/vlsit/HikakeLHPSHTUUK23
%A Hikake, Kaito
%A Li, Zhuo
%A Hao, Junxiang
%A Pandy, Chitra
%A Saraya, Takuya
%A Hiramoto, Toshiro
%A Takahashi, Takanori
%A Uenuma, Mutsunori
%A Uraoka, Yukiharu
%A Kobayashi, Masaharu
%B VLSI Technology and Circuits
%D 2023
%I IEEE
%K dblp
%P 1-2
%T A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-off Operation, High Mobility and Reliability for 3D Integrated Devices.
%U http://dblp.uni-trier.de/db/conf/vlsit/vlsit2023.html#HikakeLHPSHTUUK23
%@ 978-4-86348-806-9
@inproceedings{conf/vlsit/HikakeLHPSHTUUK23,
added-at = {2023-07-28T00:00:00.000+0200},
author = {Hikake, Kaito and Li, Zhuo and Hao, Junxiang and Pandy, Chitra and Saraya, Takuya and Hiramoto, Toshiro and Takahashi, Takanori and Uenuma, Mutsunori and Uraoka, Yukiharu and Kobayashi, Masaharu},
biburl = {https://www.bibsonomy.org/bibtex/23de94a9b469df4ca08c37df660f7edad/dblp},
booktitle = {VLSI Technology and Circuits},
crossref = {conf/vlsit/2023},
ee = {https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185234},
interhash = {7b08ad4db1bbdffed8f9c6ab2728b755},
intrahash = {3de94a9b469df4ca08c37df660f7edad},
isbn = {978-4-86348-806-9},
keywords = {dblp},
pages = {1-2},
publisher = {IEEE},
timestamp = {2024-04-09T19:13:01.000+0200},
title = {A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-off Operation, High Mobility and Reliability for 3D Integrated Devices.},
url = {http://dblp.uni-trier.de/db/conf/vlsit/vlsit2023.html#HikakeLHPSHTUUK23},
year = 2023
}