Inproceedings,
18.2 A 1.2V 20nm 307GB/s HBM DRAM with at-speed wafer-level I/O test scheme and adaptive refresh considering temperature distribution.
K. Sohn, W. Yun, R. Oh, C. Oh, S. Seo, M. Park, D. Shin, W. Jung, S. Shin, J. Ryu, H. Yu, J. Jung, K. Nam, S. Choi, J. Lee, U. Kang, Y. Sohn, J. Choi, C. Kim, S. Jang, and G. Jin.ISSCC, page 316-317. IEEE, (2016)
Meta data
- BibTeX key
- conf/isscc/SohnYOOSPSJSRYJ16
- entry type
- inproceedings
- booktitle
- ISSCC
- year
- 2016
- pages
- 316-317
- publisher
- IEEE
- crossref
- conf/isscc/2016
- ee
- http://dx.doi.org/10.1109/ISSCC.2016.7418034
- isbn
- 978-1-4673-9467-3
- url
- http://dblp.uni-trier.de/db/conf/isscc/isscc2016.html#SohnYOOSPSJSRYJ16
Tags
Users
Comments and Reviewsshow / hide
Cite this publication
More citation styles
- please select -%0 Conference Paper
%1 conf/isscc/SohnYOOSPSJSRYJ16
%A Sohn, Kyomin
%A Yun, Won-Joo
%A Oh, Reum
%A Oh, Chi-Sung
%A Seo, Seong-Young
%A Park, Min-Sang
%A Shin, Dong-Hak
%A Jung, Won-Chang
%A Shin, Sang-Hoon
%A Ryu, Je-Min
%A Yu, Hye-Seung
%A Jung, Jae-Hun
%A Nam, Kyung-Woo
%A Choi, Seouk-Kyu
%A Lee, Jaewook
%A Kang, Uksong
%A Sohn, Young-Soo
%A Choi, Jung-Hwan
%A Kim, Chi-Wook
%A Jang, Seong-Jin
%A Jin, Gyo-Young
%B ISSCC
%D 2016
%I IEEE
%K dblp
%P 316-317
%T 18.2 A 1.2V 20nm 307GB/s HBM DRAM with at-speed wafer-level I/O test scheme and adaptive refresh considering temperature distribution.
%U http://dblp.uni-trier.de/db/conf/isscc/isscc2016.html#SohnYOOSPSJSRYJ16
%@ 978-1-4673-9467-3
@inproceedings{conf/isscc/SohnYOOSPSJSRYJ16,
added-at = {2016-03-02T00:00:00.000+0100},
author = {Sohn, Kyomin and Yun, Won-Joo and Oh, Reum and Oh, Chi-Sung and Seo, Seong-Young and Park, Min-Sang and Shin, Dong-Hak and Jung, Won-Chang and Shin, Sang-Hoon and Ryu, Je-Min and Yu, Hye-Seung and Jung, Jae-Hun and Nam, Kyung-Woo and Choi, Seouk-Kyu and Lee, Jaewook and Kang, Uksong and Sohn, Young-Soo and Choi, Jung-Hwan and Kim, Chi-Wook and Jang, Seong-Jin and Jin, Gyo-Young},
biburl = {https://www.bibsonomy.org/bibtex/2581775c700339be034f9f6d543f07ba3/dblp},
booktitle = {ISSCC},
crossref = {conf/isscc/2016},
ee = {http://dx.doi.org/10.1109/ISSCC.2016.7418034},
interhash = {b32f77a0cfade86482baa850667ae699},
intrahash = {581775c700339be034f9f6d543f07ba3},
isbn = {978-1-4673-9467-3},
keywords = {dblp},
pages = {316-317},
publisher = {IEEE},
timestamp = {2016-03-03T11:43:08.000+0100},
title = {18.2 A 1.2V 20nm 307GB/s HBM DRAM with at-speed wafer-level I/O test scheme and adaptive refresh considering temperature distribution.},
url = {http://dblp.uni-trier.de/db/conf/isscc/isscc2016.html#SohnYOOSPSJSRYJ16},
year = 2016
}