%0 Conference Paper %1 WOS:000229036500052 %A Freire, JAK %A Pereira, TAS %A Silva, JCE %A Farias, GA %A Freire, VN %A da Silva, EF %B Quantum Sensing and Nanophotonic Devices II %C 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA %D 2005 %E Brown, M Razeghi and GJ %I SPIE-INT SOC OPTICAL ENGINEERING %K SiGe; Si} nanostructures; {high-k; %P 538-546 %R 10.1117/12.582773 %T Si- and SiGe- high-k oxide nanostructures for optoelectronic devices %V 5732 %X In this work, we will discuss Si-/SiGe and high-k oxides nanostructures. The exciton properties of strained Si/Si1-xGex quantum well (QW) are calculated taking into account interface effects and both possibilities of the band lineup of the conduction-band offset, type-I and type-II. Our numerical results show that interface fluctuations of only 10 A in a Si/Si1-xGex 50 A type-I QW (type-II QW) leads to a 25 meV (10 meV) blueshift of the exciton (transition) energy. Concerning high- k nanostructures, our simulation was performed in order to analyse how the charge image effects can modify the electronics properties in Si/HfO2 and Si/SrTiO3 based quantum wells. The results of Si/SrTiO3 (Si/HfO2) quantum wells indicate a recombination emission difference, as compared with the case when no charge image effects are included, of the order of 1.5 eV (0.7 eV).

@inproceedings{WOS:000229036500052, abstract = {In this work, we will discuss Si-/SiGe and high-k oxides nanostructures. The exciton properties of strained Si/Si1-xGex quantum well (QW) are calculated taking into account interface effects and both possibilities of the band lineup of the conduction-band offset, type-I and type-II. Our numerical results show that interface fluctuations of only 10 A in a Si/Si1-xGex 50 A type-I QW (type-II QW) leads to a 25 meV (10 meV) blueshift of the exciton (transition) energy. Concerning high- k nanostructures, our simulation was performed in order to analyse how the charge image effects can modify the electronics properties in Si/HfO2 and Si/SrTiO3 based quantum wells. The results of Si/SrTiO3 (Si/HfO2) quantum wells indicate a recombination emission difference, as compared with the case when no charge image effects are included, of the order of 1.5 eV (0.7 eV).}, added-at = {2022-05-23T20:00:14.000+0200}, address = {1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA}, author = {Freire, JAK and Pereira, TAS and Silva, JCE and Farias, GA and Freire, VN and da Silva, EF}, biburl = {https://www.bibsonomy.org/bibtex/213ddad6ad0666f236a3e05339d0205a1/ppgfis_ufc_br}, booktitle = {Quantum Sensing and Nanophotonic Devices II}, doi = {10.1117/12.582773}, editor = {Brown, M {Razeghi and GJ}}, interhash = {bd538046d281faf9628f4dfdfab227c2}, intrahash = {13ddad6ad0666f236a3e05339d0205a1}, issn = {0277-786X}, keywords = {SiGe; Si} nanostructures; {high-k;}, note = {Conference on Quantum Sensing and Nanophotonic Devices II, San Jose, CA, JAN 23-27, 2005}, organization = {SPIE}, pages = {538-546}, publisher = {SPIE-INT SOC OPTICAL ENGINEERING}, pubstate = {published}, series = {PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Si- and SiGe- high-k oxide nanostructures for optoelectronic devices}, tppubtype = {inproceedings}, volume = 5732, year = 2005 }