From post

Si- and SiGe- high-k oxide nanostructures for optoelectronic devices

, , , , , и . Quantum Sensing and Nanophotonic Devices II, том 5732 из PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), стр. 538-546. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA, SPIE, SPIE-INT SOC OPTICAL ENGINEERING, (2005)Conference on Quantum Sensing and Nanophotonic Devices II, San Jose, CA, JAN 23-27, 2005.
DOI: 10.1117/12.582773

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

 

Другие публикации лиц с тем же именем

Gate inversion effect in Si1-xGex/HfO2/Si metal-oxide-semiconductor devices, , , , , и . APPLIED PHYSICS LETTERS, (2005)Si- and SiGe- high-k oxide nanostructures for optoelectronic devices, , , , , и . Quantum Sensing and Nanophotonic Devices II, том 5732 из PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), стр. 538-546. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA, SPIE, SPIE-INT SOC OPTICAL ENGINEERING, (2005)Conference on Quantum Sensing and Nanophotonic Devices II, San Jose, CA, JAN 23-27, 2005.