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Disambiguation of "da Silva, EF"

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Si- and SiGe- high-k oxide nanostructures for optoelectronic devices

, , , , , and . Quantum Sensing and Nanophotonic Devices II, volume 5732 of PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), page 538-546. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA, SPIE, SPIE-INT SOC OPTICAL ENGINEERING, (2005)Conference on Quantum Sensing and Nanophotonic Devices II, San Jose, CA, JAN 23-27, 2005.
DOI: 10.1117/12.582773

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Kerstin da Silva

Rodrigo Corrêa da Silva

Adriano João Da Silva

Carolina Ferraz da Silva

Felício Aristóteles Da Silva

 

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Statistical analysis of topographic images of nanoporous silicon and model surfaces, , , , , , and . MICROELECTRONICS JOURNAL, 36 (11, SI): 1011-1015 (2005)4th Workshop on Semiconductor Nanodevices and Nanostructured Materials, Sao Pedro, BRAZIL, MAR 09-13, 2005.Feasibility of IR-to-UV detection in SiC/SiO2 heterostructures, , and . QUANTUM SENSING AND NANOPHOTONIC DEVICES II, volume 5732 of Proceedings of SPIE, page 530-537. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA, SPIE, SPIE-INT SOC OPTICAL ENGINEERING, (2005)Conference on Quantum Sensing and Nanophotonic Devices II, San Jose, CA, JAN 23-27, 2005.Intraband absorption in silicon nanocrystals: The combined effect of shape and crystal orientation, , , and . APPLIED PHYSICS LETTERS, (2005)The role of multiple damaged layers at the Si/SiO2 interface on the dielectric breakdown of MOS capacitors, , , , and . APPLIED SURFACE SCIENCE, 190 (1-4): 35-38 (2002)8th International Conference on the Formation of Semiconductor Interfaces (ICFSI-8), HOKKAIDO UNIV, SAPPORO, JAPAN, JUN 10-15, 2001.Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1-x strained quantum wells, , , , and . APPLIED SURFACE SCIENCE, 190 (1-4): 247-251 (2002)8th International Conference on the Formation of Semiconductor Interfaces (ICFSI-8), HOKKAIDO UNIV, SAPPORO, JAPAN, JUN 10-15, 2001.Effect of ageing on x-ray induced dopant passivation in MOS capacitors, , , and . SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 15 (8): 794-798 (2000)High-temperature effects on the velocity overshoot of hot electrons in 6H-and 3C-SiC, , , , and . SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 14 (11): 1007-1011 (1999)Ultrafast electron drift velocity overshoot in 3C-SiC, , , , and . SOLID STATE COMMUNICATIONS, 113 (9): 539-542 (2000)Transport transient of electrons in wurtzite InN: The effect of the band structure anisotropy, , , , , , and . INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, page 368-372. PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY, Res Ctr Julich; AIXTRON; Deutsch Forsch Gemeinsch; European Off Aerosp Res & Dev; Deutsch Gesell Kristallwachstum & Kristallzucht, WILEY-V C H VERLAG GMBH, (2002)International Workshop on Nitride Semiconductors (IWN 2002), AACHEN, GERMANY, JUL 22-25, 2002.A percolation based dielectric breakdown model with randomic changes in the dielectric constant, , , , and . PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS, 305 (3-4): 351-359 (2002)