%0 Journal Article %1 journals/tcas/YangPSWYJ15 %A Yang, Younghwi %A Park, Juhyun %A Song, Seung Chul %A Wang, Joseph %A Yeap, Geoffrey %A Jung, Seong-Ook %D 2015 %J IEEE Trans. Circuits Syst. I Regul. Pap. %K dblp %N 6 %P 1538-1545 %T SRAM Design for 22-nm ETSOI Technology: Selective Cell Current Boosting and Asymmetric Back-Gate Write-Assist Circuit. %U http://dblp.uni-trier.de/db/journals/tcas/tcasI62.html#YangPSWYJ15 %V 62-I

@article{journals/tcas/YangPSWYJ15, added-at = {2020-05-22T00:00:00.000+0200}, author = {Yang, Younghwi and Park, Juhyun and Song, Seung Chul and Wang, Joseph and Yeap, Geoffrey and Jung, Seong-Ook}, biburl = {https://www.bibsonomy.org/bibtex/23da14ffac12163995b3b0de32b535428/dblp}, ee = {https://doi.org/10.1109/TCSI.2015.2416814}, interhash = {da00fc444154e328a7cef662f25a6fd8}, intrahash = {3da14ffac12163995b3b0de32b535428}, journal = {IEEE Trans. Circuits Syst. I Regul. Pap.}, keywords = {dblp}, number = 6, pages = {1538-1545}, timestamp = {2020-05-23T12:32:13.000+0200}, title = {SRAM Design for 22-nm ETSOI Technology: Selective Cell Current Boosting and Asymmetric Back-Gate Write-Assist Circuit.}, url = {http://dblp.uni-trier.de/db/journals/tcas/tcasI62.html#YangPSWYJ15}, volume = {62-I}, year = 2015 }