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SRAM Design for 22-nm ETSOI Technology: Selective Cell Current Boosting and Asymmetric Back-Gate Write-Assist Circuit.

Y. Yang, J. Park, S. Song, J. Wang, G. Yeap, and S. Jung. IEEE Trans. Circuits Syst. I Regul. Pap., 62-I (6): 1538-1545 (2015)

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Rosemary Park

Sungjune Park

Jinhyung Park

Kwan Park

Shinja Park

Other publications of authors with the same name

High-Order Tensor Regularization With Application to Attribute Ranking.K. Kim, J. Park, and J. Tompkin. CVPR, page 4349-4357. Computer Vision Foundation / IEEE Computer Society, (2018)Shape Analysis of Euclidean Curves under Frenet-Serret Framework.P. Chassat, J. Park, and N. Brunel. ICCV, page 4004-4013. IEEE, (2023)SiâMn/Reduced Graphene Oxide Nanocomposite Anodes with Enhanced Capacity and Stability for Lithium-Ion BatteriesA. Park, J. Kim, K. Kim, K. Zhang, J. Park, J. Park, J. Lee, and P. Yoo. ACS Applied Materials & Interfaces, 6 (3): 1702-1708 (2014)PMID: 24443772.Structural components in functional data.J. Park, T. Gasser, and V. Rousson. Comput. Stat. Data Anal., 53 (9): 3452-3465 (2009)Power-Gated 9T SRAM Cell for Low-Energy Operation.T. Oh, H. Jeong, K. Kang, J. Park, Y. Yang, and S. Jung. IEEE Trans. Very Large Scale Integr. Syst., 25 (3): 1183-1187 (2017)pMOS Pass Gate Local Bitline SRAM Architecture With Virtual $V_SS$ for Near-Threshold Operation.J. Park, T. Oh, and S. Jung. IEEE Trans. Very Large Scale Integr. Syst., 28 (4): 1079-1083 (2020)The Frenet-Serret Framework for Aligning Geometric Curves.N. Brunel, and J. Park. GSI, volume 11712 of Lecture Notes in Computer Science, page 608-617. Springer, (2019)SRAM Design for 22-nm ETSOI Technology: Selective Cell Current Boosting and Asymmetric Back-Gate Write-Assist Circuit.Y. Yang, J. Park, S. Song, J. Wang, G. Yeap, and S. Jung. IEEE Trans. Circuits Syst. I Regul. Pap., 62-I (6): 1538-1545 (2015)Bitline Precharging and Preamplifying Switching pMOS for High-Speed Low-Power SRAM.H. Jeong, J. Park, T. Oh, W. Rim, T. Song, G. Kim, H. Won, and S. Jung. IEEE Trans. Circuits Syst. II Express Briefs, 63-II (11): 1059-1063 (2016)On the choice of an auxiliary function in the M/G/infinity estimation.J. Park. Comput. Stat. Data Anal., 51 (12): 5477-5482 (2007)

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Disambiguation of "Park, Juhyun"

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SRAM Design for 22-nm ETSOI Technology: Selective Cell Current Boosting and Asymmetric Back-Gate Write-Assist Circuit.

Please choose a person to relate this publication to

Rosemary Park

Sungjune Park

Jinhyung Park

Kwan Park

Shinja Park

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Park, Juhyun"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML SRAM Design for 22-nm ETSOI Technology: Selective Cell Current Boosting and Asymmetric Back-Gate Write-Assist Circuit.

Please choose a person to relate this publication to

Rosemary Park

Sungjune Park

Jinhyung Park

Kwan Park

Shinja Park

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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MSOffice XML

SRAM Design for 22-nm ETSOI Technology: Selective Cell Current Boosting and Asymmetric Back-Gate Write-Assist Circuit.