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Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V).

C. Wang, A. Kumar, K. Han, C. Sun, H. Xu, J. Zhang, Y. Kang, Q. Kong, Z. Zheng, Y. Wang, and X. Gong. VLSI Technology and Circuits, page 294-295. IEEE, (2022)

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Mihyun Kang

Ewha Kang

Mujin Kang

Kang Teng

Namhi Kang

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