Author of the publication

W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application.

L. Jiao, Z. Zhou, Z. Zheng, Y. Kang, C. Sun, Q. Kong, X. Wang, D. Zhang, G. Liu, L. Liu, and X. Gong. ICICDT, page 5-7. IEEE, (2022)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Ewha Kang

Mihyun Kang

Mujin Kang

Kang Teng

Jinyu Kang

Other publications of authors with the same name

Thickness-Engineered Extremely-thin Channel High Performance ITO TFTs with Raised S/D Architecture: Record-Low RSD, Highest Moblity (Sub-4 nm TCH Regime), and High VTH Tunability.Y. Kang, K. Han, Y. Chen, and X. Gong. VLSI Technology and Circuits, page 1-2. IEEE, (2023)Novel Bridge Transmission Line Method for Thin-Film Semiconductors: Modelling, Simulation Verification, and Experimental Demonstration.K. Han, Y. Kang, Y. Chen, and X. Gong. VLSI Technology and Circuits, page 1-2. IEEE, (2023)Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical Understanding.D. Zhang, J. Wu, Q. Kong, Z. Zhou, L. Liu, K. Han, C. Sun, X. Wang, G. Liu, L. Jiao and 4 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3D Multi-Fin Floating Gate: In-situ ALD-deposited MFM, LCH of 50 nm, > 2×109 Endurance, and 58.3% Area Saving.X. Wang, Z. Zheng, Q. Kong, L. Jiao, K. Han, C. Sun, Z. Zhou, L. Liu, Y. Kang, G. Liu and 2 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)First Demonstration of BEOL-Compatible Write-Enhanced Ferroelectric-Modulated Diode (FMD): New Possibility for Oxide Semiconductor Memory Devices.L. Jiao, K. Han, Z. Zhou, Z. Zheng, X. Wang, Q. Kong, Y. Kang, J. Zhang, L. Liu, and X. Gong. VLSI Technology and Circuits, page 1-2. IEEE, (2023)BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application.L. Jiao, Z. Zhou, Z. Zheng, Y. Kang, C. Sun, Q. Kong, X. Wang, D. Zhang, G. Liu, L. Liu and 1 other author(s). ICICDT, page 5-7. IEEE, (2022)Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V).C. Wang, A. Kumar, K. Han, C. Sun, H. Xu, J. Zhang, Y. Kang, Q. Kong, Z. Zheng, Y. Wang and 1 other author(s). VLSI Technology and Circuits, page 294-295. IEEE, (2022)Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention.Z. Zhou, L. Jiao, J. Zhou, Z. Zheng, Y. Chen, K. Han, Y. Kang, and X. Gong. VLSI Technology and Circuits, page 357-358. IEEE, (2022)

BibSonomy

Disambiguation of "Kang, Yuye"

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application.

Please choose a person to relate this publication to

Ewha Kang

Mihyun Kang

Mujin Kang

Kang Teng

Jinyu Kang

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Kang, Yuye"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application.

Please choose a person to relate this publication to

Ewha Kang

Mihyun Kang

Mujin Kang

Kang Teng

Jinyu Kang

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application.