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Simulation of broadband transient signals in frequency-domain using impedance parameters., , , , and . SMACD, page 1-4. IEEE, (2017)A G-Band Four-Element Butler Matrix in 0.13 µm SiGe BiCMOS Technology., , , , and . IEEE J. Solid State Circuits, 49 (9): 1916-1926 (2014)A Mixed-Signal Offset-Compensation System for Multi-Gbit/s Optical Receiver Frontends., , , and . VLSI-SoC, page 46-51. IEEE, (2019)A low-power 20-GHz 52-dBΩ transimpedance amplifier in 80-nm CMOS., , , , , , and . IEEE J. Solid State Circuits, 39 (6): 885-894 (2004)26-42 GHz SOI CMOS low noise amplifier.. IEEE J. Solid State Circuits, 39 (3): 522-528 (2004)Small signal analysis of quadrature LC oscillator operating at 59-62.5 GHz., , and . IET Circuits Devices Syst., 3 (6): 322-330 (2009)An Integrated Primary Impulse Radio Ultra-Wideband Radar for Short-Range Real-Time Localization., , and . IEEE Trans. Circuits Syst. I Regul. Pap., 69 (8): 3190-3201 (2022)A 6-15 GHz ultra-wideband signal generator with 82 % continuous tuning range for FMCW radar., , and . PRIME, page 93-96. IEEE, (2019)A scalable synchronous reload technique for wide division range multi modulus dividers., , , , and . ICECS, page 555-558. IEEE, (2015)A 2 GHz low noise amplifier with transformer input matching in 28 nm CMOS., , , , and . NORCAS, page 1-6. IEEE, (2016)