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Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs.

, , , , and . Microelectron. Reliab., 43 (9-11): 1455-1460 (2003)

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Effects of hot carrier and irradiation stresses on advanced excimer laser annealed polycrystalline silicon thin film transistors., , , , , , , and . Microelectron. Reliab., 44 (9-11): 1631-1636 (2004)In memory of D. Stewart Peck., and . Microelectron. Reliab., 41 (4): 481 (2001)NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs., , , , , and . Microelectron. Reliab., 46 (9-11): 1828-1833 (2006)Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs., , , , and . Microelectron. Reliab., 43 (9-11): 1455-1460 (2003)A review of pulsed NBTI in P-channel power VDMOSFETs., , , , , , , , , and . Microelectron. Reliab., (2018)Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs., , , , , and . Microelectron. Reliab., 42 (4-5): 669-677 (2002)Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs., , , , , and . IET Circuits Devices Syst., 2 (2): 213-221 (2008)Negative bias temperature instability in n-channel power VDMOSFETs., , , , , and . Microelectron. Reliab., 48 (8-9): 1313-1317 (2008)Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs., , , , , and . Microelectron. Reliab., 41 (9-10): 1373-1378 (2001)Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs., , , , , and . Microelectron. Reliab., 47 (9-11): 1400-1405 (2007)