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Disambiguation of "Kakushima, Kuniyuki"

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Switching of 3300V Scaled IGBT by 5V Gate Drive.

, , , , , , , , , , , , , , , , , , , , , , and . ASICON, page 1-3. IEEE, (2019)

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Switching of 3300V Scaled IGBT by 5V Gate Drive., , , , , , , , , and 13 other author(s). ASICON, page 1-3. IEEE, (2019)Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures., , , , , , , , , and 1 other author(s). Microelectron. Reliab., 54 (4): 746-754 (2014)3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)., , , , , , , , , and 12 other author(s). ASICON, page 1137-1140. IEEE, (2017)Equivalent Noise Temperature Representation for Scaled MOSFETs., , and . IEICE Trans. Electron., 93-C (10): 1550-1552 (2010)Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes., , , , , and . Microelectron. Reliab., (2016)Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT., , , , , , , , and . ESSDERC, page 107-110. IEEE, (2013)Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors., , , , , , , and . Microelectron. Reliab., (2018)Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown., , , , and . Microelectron. Reliab., 52 (9-10): 1909-1912 (2012)Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately., , , , , , , , , and 8 other author(s). ESSDERC, page 26-29. IEEE, (2018)Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing., , , , , , and . IEICE Electron. Express, 3 (13): 316-321 (2006)