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1.56GHz/0.9V energy-efficient reconfigurable CAM/SRAM using 6T-CMOS bitcell.

, , , , and . ESSCIRC, page 316-319. IEEE, (2017)

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A 32nm tunnel FET SRAM for ultra low leakage., , , , and . ISCAS, page 2517-2520. IEEE, (2012)Tunnel FET based refresh-free-DRAM., , , , and . DATE, page 914-917. IEEE, (2017)Ultra-Low-Power compact TFET Flip-Flop design for high-performance low-voltage applications., , , , and . ISQED, page 107-112. IEEE, (2016)Tunnel FET based ultra-low-leakage compact 2T1C SRAM., , , , and . ISQED, page 71-75. IEEE, (2017)Bulk and FDSOI SRAM resiliency to radiation effects., , , and . MWSCAS, page 655-658. IEEE, (2014)3T-TFET bitcell based TFET-CMOS hybrid SRAM design for Ultra-Low Power applications., , , , and . DATE, page 361-366. IEEE, (2016)16Kb hybrid TFET/CMOS reconfigurable CAM/SRAM array based on 9T-TFET bitcell., , , , and . ESSDERC, page 356-359. IEEE, (2016)1.56GHz/0.9V energy-efficient reconfigurable CAM/SRAM using 6T-CMOS bitcell., , , , and . ESSCIRC, page 316-319. IEEE, (2017)RRAM-based FPGA for "normally off, instantly on" applications., , , , , , , and . NANOARCH, page 101-108. ACM, (2012)A 2-Gb/s 60 GHz transmission-gate based 130nm CMOS on-off keying modulator., , and . ICECS, page 420-422. IEEE, (2016)