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Disambiguation of "Aichinger, Thomas"

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A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs.

, , , , , , , , , , , and . IRPS, page 3. IEEE, (2024)

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Corinna Aichinger

Karl Aichinger

Ulrike Aichinger

Heinrich Aichinger

Stefan Aichinger

 

Other publications of authors with the same name

Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs., , , , and . IRPS, page 3. IEEE, (2018)Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs., , , and . Microelectron. Reliab., 51 (9-11): 1530-1534 (2011)Impact of hydrogen on recoverable and permanent damage following negative bias temperature stress, , , , and . IEEE International Reliability Physics Symposium, page 1063. (2010)Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs., and . IRPS, page 1-6. IEEE, (2020)Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs., , , and . IRPS, page 1-6. IEEE, (2020)A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs., , , , , , , , , and 2 other author(s). IRPS, page 3. IEEE, (2024)Similarities and Differences of BTI in SiC and Si Power MOSFETs., , , , , , and . IRPS, page 1-7. IEEE, (2020)Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs., , , , , , , , and . IRPS, page 1-10. IEEE, (2023)A straightforward electrical method to determine screening capability of GOX extrinsics in arbitrary, commercially available SiC MOSFETs., and . IRPS, page 1-5. IEEE, (2021)Case study on multiple fault dependability and security evaluations., , , , , , , and . Microprocess. Microsystems, 37 (2): 218-227 (2013)