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MBE-Grown Ge0.92Sn0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge0.92Sn0.08 Substrate., , , , , , , , , и . MIPRO, стр. 50-54. IEEE, (2021)Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy., , , , , , и . MIPRO, стр. 40-44. IEEE, (2021)Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers., , , , , , , , , и . MIPRO, стр. 17-21. IEEE, (2020)Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well., , , , , , , и . MIPRO, стр. 7-12. IEEE, (2019)Electrical Characterization of pure Boron-on-Germanium pin Diodes., , , и . MIPRO, стр. 13-18. IEEE, (2019)Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si., , , , , , и . Microelectron. J., (2022)A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector., , , , , , и . IEEE SENSORS, стр. 1-4. IEEE, (2019)Characterization of Fe Micromagnets for Semiconductor Spintronics by In-Field Magnetic Force Microscopy., , , , , и . MIPRO, стр. 31-35. IEEE, (2021)Electroluminescence of SixGe1-x-ySny/Ge1-ySny pin-Diodes Grown on a GeSn Buffer., , , , , , и . ESSCIRC, стр. 165-168. IEEE, (2022)GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection., , , , , и . ESSCIRC, стр. 169-172. IEEE, (2022)