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Processing sequence for a PureB bipolar junction transistor., , , , и . MIPRO, стр. 13-16. IEEE, (2020)Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics., , , , , , , , и . MIPRO, стр. 45-49. IEEE, (2021)Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy., , , , , , и . MIPRO, стр. 1-6. IEEE, (2019)Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures., , , , , , , и . MIPRO, стр. 55-59. IEEE, (2021)Local growth of graphene on Cu and Cu0.88Ni0.12 foil substrates., , , , и . MIPRO, стр. 31-36. IEEE, (2017)Characterization of Fe Micromagnets for Semiconductor Spintronics by In-Field Magnetic Force Microscopy., , , , , и . MIPRO, стр. 31-35. IEEE, (2021)MBE-Grown Ge0.92Sn0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge0.92Sn0.08 Substrate., , , , , , , , , и . MIPRO, стр. 50-54. IEEE, (2021)Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy., , , , , , и . MIPRO, стр. 40-44. IEEE, (2021)Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well., , , , , , , и . MIPRO, стр. 7-12. IEEE, (2019)Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers., , , , , , , , , и . MIPRO, стр. 17-21. IEEE, (2020)