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Monolithic Integration of III -V on silicon for photonic and electronic applications., , , , , , , , , and 1 other author(s). DRC, page 1-2. IEEE, (2018)Excel mit VBA in der Wärmetechnik : Wärmeübertragung, Gasmischungen, Verbrennungsrechnung. Müller, Heidelberg, (2008)Complementary III-V heterostructure tunnel FETs., , , , , and . ESSDERC, page 403-407. IEEE, (2016)Butt-Coupled III-V Photodetector Monolithically Integrated on SOI with data reception at 50 Gbps OOK., , , , , , , and . OFC, page 1-3. IEEE, (2021)Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing., , , , , , , and . ESSDERC, page 106-109. IEEE, (2019)Electrical and thermoelectrical properties of gated InAs nanowires., , , , , , , and . ESSDERC, page 252-255. IEEE, (2013)Ballistic transport and high thermopower in one-dimensional InAs nanowires., , , , , , , and . ESSDERC, page 341-344. IEEE, (2016)In-plane monolithic integration of scaled III-V photonic devices., , , , , , , and . ECOC, page 1-3. IEEE, (2020)III-V semiconductor nanowires for future devices., , , , , , , , and . DATE, page 1-2. European Design and Automation Association, (2014)Sondheimer oscillations as a probe of non-ohmic flow in WP$_2$ crystals, , , , , , , , , and 6 other author(s). Nat. Commun., 12 (1): 4799-- (Aug 10, 2021)