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III-V semiconductor nanowires for future devices.

H. Schmid, B. Borg, K. Moselund, P. Kanungo, G. Signorello, S. Karg, P. Mensch, V. Schmidt, and H. Riel. DATE, page 1-2. European Design and Automation Association, (2014)

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Heinz Schmid

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Butt-Coupled III-V Photodetector Monolithically Integrated on SOI with data reception at 50 Gbps OOK.P. Tiwari, P. Wen, S. Mauthe, M. Baumann, B. Bitachon, H. Schmid, J. Leuthold, and K. Moselund. OFC, page 1-3. IEEE, (2021)Excel mit VBA in der Wärmetechnik : Wärmeübertragung, Gasmischungen, VerbrennungsrechnungH. Schmid. Müller, Heidelberg, (2008)Complementary III-V heterostructure tunnel FETs.K. Moselund, D. Cutaia, H. Schmid, H. Riel, S. Sant, and A. Schenk. ESSDERC, page 403-407. IEEE, (2016)Monolithic Integration of III -V on silicon for photonic and electronic applications.S. Mauthe, H. Schmid, B. Mayer, S. Wirths, C. Convertino, Y. Baumgartner, L. Czornomaz, M. Sousa, P. Staudinger, H. Riel and 1 other author(s). DRC, page 1-2. IEEE, (2018)Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing.M. Rupakula, J. Zhang, F. Bellando, F. Wildhaber, C. Convertino, H. Schmid, K. Moselund, and A. Ionescu. ESSDERC, page 106-109. IEEE, (2019)Electrical and thermoelectrical properties of gated InAs nanowires.P. Mensch, S. Karg, B. Gotsmann, P. Kanungo, V. Schmidt, V. Troncale, H. Schmid, and H. Riel. ESSDERC, page 252-255. IEEE, (2013)Ballistic transport and high thermopower in one-dimensional InAs nanowires.S. Karg, V. Schaller, A. Gaul, K. Moselund, H. Schmid, B. Gotsmann, J. Gooth, and H. Riel. ESSDERC, page 341-344. IEEE, (2016)Sondheimer oscillations as a probe of non-ohmic flow in WP$_2$ crystalsM. van Delft, Y. Wang, C. Putzke, J. Oswald, G. Varnavides, C. Garcia, C. Guo, H. Schmid, V. Süss, H. Borrmann and 6 other author(s). Nat. Commun., 12 (1): 4799-- (Aug 10, 2021)In-plane monolithic integration of scaled III-V photonic devices.N. Triviño, S. Mauthe, M. Scherrer, P. Tiwari, P. Wen, M. Sousa, H. Schmid, and K. Moselund. ECOC, page 1-3. IEEE, (2020)III-V semiconductor nanowires for future devices.H. Schmid, B. Borg, K. Moselund, P. Kanungo, G. Signorello, S. Karg, P. Mensch, V. Schmidt, and H. Riel. DATE, page 1-2. European Design and Automation Association, (2014)

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Disambiguation of "Schmid, Heinz"

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III-V semiconductor nanowires for future devices.

Please choose a person to relate this publication to

Heinz Schmid

Heinz Schmid

Heinz Schmid

Heinz Schmid

Heinz Schmid

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Schmid, Heinz"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML III-V semiconductor nanowires for future devices.

Please choose a person to relate this publication to

Heinz Schmid

Heinz Schmid

Heinz Schmid

Heinz Schmid

Heinz Schmid

Other publications of authors with the same name

Disambiguation

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URL
DOI
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Chicago
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III-V semiconductor nanowires for future devices.