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BEoL Reliability, XPS and REELS Study on low-k Dielectrics to understand Breakdown Mechanisms.

, , , , , , , , , и . IRPS, стр. 1-5. IEEE, (2020)

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Malte Czernohorsky

Olf Czernohorsky

Thomas Malter

Armin Malter

Georg Malterer

 

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Reliability of Ferroelectric and Antiferroelectric Si: HfO2 materials in 3D capacitors by TDDB studies., , , , , , , и . IRPS, стр. 47-1. IEEE, (2022)Piezoelectric response of polycrystalline silicon‐doped hafnium oxide thin films determined by rapid temperature cycles, , , , , , , , и . Adv. Electron. Mater., 6 (3): 1901015 (29.01.2020)CMOS Compatible Pyroelectric Applications Enabled by Doped HfO2 Films on Deep-Trench Structures., , , , , и . ESSDERC, стр. 130-133. IEEE, (2018)Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells., , , , , , , , , и 9 other автор(ы). IRPS, стр. 1-9. IEEE, (2020)Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability., , , , , , , , , и 7 other автор(ы). IMW, стр. 1-4. IEEE, (2022)Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions., , , , , , , , , и 5 other автор(ы). IRPS, стр. 11-1. IEEE, (2022)Enablement of CMOS integrated sensor, harvesting and storage applications by ferroelectric HfO2., , и . ICICDT, стр. 84-87. IEEE, (2022)Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications., , , , , , , , , и 1 other автор(ы). NVMTS, стр. 1-4. IEEE, (2019)BEoL Reliability, XPS and REELS Study on low-k Dielectrics to understand Breakdown Mechanisms., , , , , , , , , и . IRPS, стр. 1-5. IEEE, (2020)