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Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM., , , , , , , , , and 7 other author(s). VLSI Circuits, page 194-. IEEE, (2019)Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors., , , , , , , , , and 1 other author(s). IRPS, page 10-1. IEEE, (2022)Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm., , , , , , , , , and 14 other author(s). VLSI Technology and Circuits, page 292-293. IEEE, (2022)Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control., , , , , , , , , and 10 other author(s). ICICDT, page 88. IEEE, (2022)Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability., , , , , , , , , and 2 other author(s). IMW, page 1-4. IEEE, (2021)Edge-induced reliability & performance degradation in STT-MRAM: an etch engineering solution., , , , , , , , , and 3 other author(s). IRPS, page 1-5. IEEE, (2021)STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application., , , , , , , , , and 6 other author(s). IMW, page 1-4. IEEE, (2021)