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Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.

S. Subhechha, N. Rassoul, A. Belmonte, H. Hody, H. Dekkers, M. van Setten, A. Chasin, S. Sharifi, S. Sutar, L. Magnarin, U. Celano, H. Puliyalil, S. Kundu, M. Pak, L. Teugels, D. Tsvetanova, N. Bazzazian, K. Vandersmissen, C. Biasotto, D. Batuk, J. Geypen, J. Heijlen, R. Delhougne, and G. Kar. VLSI Technology and Circuits, page 292-293. IEEE, (2022)

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Attilio Celio

Walter Belmonte

Fabien Belmonte

Attilio Gambardella

Arturo Belmonte-Pool

Other publications of authors with the same name

Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications.H. Oh, A. Belmonte, M. Perumkunnil, J. Mitard, N. Rassoul, G. Donadio, R. Delhougne, A. Furnémont, G. Kar, and W. Dehaene. ESSDERC, page 275-278. IEEE, (2021)Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory.T. Ravsher, R. Degraeve, D. Garbin, S. Clima, A. Fantini, G. Donadio, S. Kundu, W. Devulder, H. Hody, G. Potoms and 4 other author(s). IRPS, page 7. IEEE, (2024)Fundamental understanding of NBTI degradation mechanism in IGZO channel devices.Y. Zhao, P. Rinaudo, A. Chasin, B. Truijen, B. Kaczer, N. Rassoul, H. Dekkers, A. Belmonte, I. Wolf, G. Kar and 1 other author(s). IRPS, page 1-7. IEEE, (2024)Demonstration of multilevel multiply accumulate operations for AiMC using engineered a-IGZO transistors-based 2T1C gain cell arrays.S. Subhechha, S. Cosemans, A. Belmonte, N. Rassoul, S. Sharifi, P. Debacker, D. Verkest, R. Delhougne, and G. Kar. IMW, page 1-4. IEEE, (2023)Novel Cross-Point Architecture utilizing Distributed Diode Selector for Read Margin Amplification.T. Ravsher, A. Fantini, K. Trivedi, N. Rassoul, H. Dekkers, A. Belmonte, J. Houdt, V. Afanas'ev, K. Wostyn, S. Couet and 1 other author(s). IMW, page 1-4. IEEE, (2024)Optimization of the write algorithm at low-current (10μA) in Cu/Al2O3-based conductive-bridge RAM.A. Belmonte, A. Fantini, A. Redolfi, M. Houssa, M. Jurczak, and L. Goux. ESSDERC, page 114-117. IEEE, (2015)Conductive filaments multiplicity as a variability factor in CBRAM.U. Celano, L. Goux, A. Belmonte, K. Opsomer, C. Detavernier, M. Jurczak, and W. Vandervorst. IRPS, page 11. IEEE, (2015)Enhancement of CBRAM performance by controlled formation of a hourglass-shaped filament.A. Belmonte, L. Goux, J. Woo, U. Celano, A. Redolfi, S. Clima, and G. Kar. NVMTS, page 1-5. IEEE, (2017)Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control.S. Subhechha, N. Rassoul, A. Belmonte, H. Hody, H. Dekkers, M. van Setten, A. Chasin, S. Sharifi, K. Banerjee, H. Puliyalil and 10 other author(s). ICICDT, page 88. IEEE, (2022)Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.S. Subhechha, N. Rassoul, A. Belmonte, H. Hody, H. Dekkers, M. van Setten, A. Chasin, S. Sharifi, S. Sutar, L. Magnarin and 14 other author(s). VLSI Technology and Circuits, page 292-293. IEEE, (2022)

BibSonomy

Disambiguation of "Belmonte, Attilio"

copy delete add this publication to your clipboard
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URL
DOI
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Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.

Please choose a person to relate this publication to

Attilio Celio

Walter Belmonte

Fabien Belmonte

Attilio Gambardella

Arturo Belmonte-Pool

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Belmonte, Attilio"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.

Please choose a person to relate this publication to

Attilio Celio

Walter Belmonte

Fabien Belmonte

Attilio Gambardella

Arturo Belmonte-Pool

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.