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On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes., , , , , , , , , и . ESSDERC, стр. 126-129. IEEE, (2017)Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs., , , , , , и . ESSDERC, стр. 73-76. IEEE, (2012)Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption., , , , , , , , , и 9 other автор(ы). ESSDERC, стр. 286-289. IEEE, (2012)Analog performance of strained SOI nanowires down to 10K., , , , , , и . ESSDERC, стр. 222-225. IEEE, (2016)Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K., , , , , , , и . Microelectron. Reliab., (2017)Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model., , , , , , , и . ESSDERC, стр. 210-213. IEEE, (2015)Performance and reliability of strained SOI transistors for advanced planar FDSOI technology., , , , , , , , , и . IRPS, стр. 2. IEEE, (2015)Plasma charging damage mechanisms and impact on new technologies., и . Microelectron. Reliab., 41 (7): 959-965 (2001)Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices., , , , , , , , , и 2 other автор(ы). ESSDERC, стр. 246-249. IEEE, (2015)Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks., , , , , и . Microelectron. Reliab., 47 (4-5): 489-496 (2007)