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Device and Architecture Outlook for Beyond CMOS Switches., , , , и . Proc. IEEE, 98 (12): 2169-2184 (2010)In Quest of the Next Information Processing Substrate: Extended Abstract: Invited., , , , , , , , , и 2 other автор(ы). DAC, стр. 17:1-17:6. ACM, (2017)Dynamics of Ferroelectric and Ionic Memories: Physics and Applications., , , , и . ASICON, стр. 1-4. IEEE, (2019)Process Dependent Switching Dynamics of Ferroelectric Hafnium Zirconate., , и . DRC, стр. 49-50. IEEE, (2019)Steep Subthreshold Swing Originating from Gate Delay., , , , и . DRC, стр. 53-54. IEEE, (2019)Resonant Tunneling Technology for Mixed Signal and Digital Circuits in the 10-100 GHz Domain., , , , и . Great Lakes Symposium on VLSI, стр. 123-. IEEE Computer Society, (1999)Supercapacity (>1000 fJF/cm2) charge release in a CVD-grown WSe2 FET incorporating a PEO: CsCI04 side gate., , , , , , и . DRC, стр. 1-2. IEEE, (2018)Electric Double Layer Esaki Tunnel Junction in a 40-nm-Length, WSe2 Channel Grown by Molecular Beam Epitaxy on Al203., , , и . ESSDERC, стр. 110-113. IEEE, (2018)Multiple-Valued Logic Computation Circuits Using Micro- and Nanoelectronic Devices., , и . ISMVL, стр. 164-169. IEEE Computer Society, (1993)A Device Non-Ideality Resilient Approach for Mapping Neural Networks to Crossbar Arrays., , , , , и . DAC, стр. 1-6. IEEE, (2020)