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InGaZnO TFTs on a flexible membrane transferred to a curved surface with a radius of 2 mm

, , , , , , and . 71st Device Research Conference, IEEE, (June 2013)
DOI: 10.1109/drc.2013.6633845

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InGaZnO TFTs on a flexible membrane transferred to a curved surface with a radius of 2 mm, , , , , , and . 71st Device Research Conference, IEEE, (June 2013)15 dB Conversion gain, 20 MHz carrier frequency AM receiver in flexible a-IGZO TFT technology with textile antennas, , , , , , , , , and . 2015 Symposium on VLSI Circuits (VLSI Circuits), IEEE, (June 2015)Flexible In–Ga–Zn–O-Based Circuits With Two and Three Metal Layers: Simulation and Fabrication Study, , , , , , , , , and . IEEE Electron Device Letters, 37 (12): 1582-1585 (December 2016)Design and analysis of high-gain amplifiers in flexible self-aligned a-IGZO thin-film transistor technology, , , , , , , , , and . Analog Integrated Circuits and Signal Processing, 87 (2): 213--222 (May 1, 2016)Bendable Printed and Thin-film Electronics for Wireless Communications, , , , , , , , , and 4 other author(s). 2018 2nd URSI Atlantic Radio Science Meeting (AT-RASC), page 1-4. (May 2018)Radio frequency electronics in a-IGZO TFT technology, , , , , , , , , and 1 other author(s). 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), page 273-276. (July 2016)Baseband amplifiers in a-IGZO TFT technology for flexible audio systems, , , , , , , , , and . 2015 International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS), page 357-361. (November 2015)Mechanically flexible vertically integrated a-IGZO thin-film transistors with 500 nm channel length fabricated on free standing plastic foil, , , , , , , , and . 2013 IEEE International Electron Devices Meeting, IEEE, (December 2013)Radio frequency electronics on plastic, , , , , , , , , and . 2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC), page 1-5. (November 2015)Flexible a-IGZO TFT amplifier fabricated on a free standing polyimide foil operating at 1.2 MHz while bent to a radius of 5 mm, , , , , , , , and . 2012 International Electron Devices Meeting, IEEE, (December 2012)