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A 2.5-GHz band low-voltage high efficiency class-E power amplifier IC with body effect.

, , , , and . ISIC, page 160-163. IEEE, (2014)

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A 2.5-GHz band low-voltage high efficiency class-E power amplifier IC with body effect., , , , and . ISIC, page 160-163. IEEE, (2014)0.3 V 15-GHz Band VCO ICs with Novel Transformer-Based Harmonic Tuned Tanks in 45-nm SOI CMOS., , and . IEICE Trans. Electron., 103-C (10): 417-425 (2020)A 28-GHz-band Stacked FET Linear Power Amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS., , and . RWS, page 1-3. IEEE, (2019)A 26-GHz-Band High Back-Off Efficiency Stacked-FET Power Amplifier IC with Adaptively Controlled Bias and Load Circuits in 45-nm CMOS SOI., , and . IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 104-A (2): 477-483 (2021)15 GHz-band low phase-noise LC-VCO with second harmonic tunable filtering technique., , , , and . PIMRC, page 1592-1595. IEEE, (2009)An HBT MMIC power amplifier with an integrated diode linearizer for low-voltage portable phone applications., , , and . IEEE J. Solid State Circuits, 33 (9): 1290-1296 (1998)High Efficiency Class-E and Compact Doherty Power Amplifiers with Novel Harmonics Termination for Handset Applications., , , , , and . IEICE Trans. Electron., 102-C (10): 699-706 (2019)23Gbps 9.4pJ/bit 80/100GHz band CMOS transceiver with on-board antenna for short-range communication., , , , , , , , , and 1 other author(s). A-SSCC, page 173-176. IEEE, (2014)