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Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement.

, , , and . Microelectron. Reliab., 42 (9-11): 1497-1500 (2002)

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Gate oxide Reliability assessment optimization., , , , , and . Microelectron. Reliab., 42 (9-11): 1505-1508 (2002)Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions., , , , , and . Microelectron. Reliab., 41 (9-10): 1295-1300 (2001)Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement., , , and . Microelectron. Reliab., 42 (9-11): 1497-1500 (2002)Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides., , , , , , and . Microelectron. Reliab., 45 (12): 1842-1854 (2005)Failures in ultrathin oxides: Stored energy or carrier energy driven?, , , , and . Microelectron. Reliab., 41 (9-10): 1367-1372 (2001)New insights into the change of voltage acceleration and temperature activation of oxide breakdown., , , , and . Microelectron. Reliab., 43 (8): 1211-1214 (2003)New insights into the change of voltage acceleration and temperature activation of oxide breakdown, , , , and . Microelectronics Reliability, (2003)