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The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies.

, , , , , , , , and . ESSDERC, page 254-257. IEEE, (2014)

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Direct Measurements and Modeling of Avalanche Dynamics and Quenching in SPADs., , , , , , , , , and 25 other author(s). ESSDERC, page 144-147. IEEE, (2023)A self-sustaining Single Photon Avalanche Diode Model., , , , , , , , , and 5 other author(s). ESSDERC, page 281-284. IEEE, (2022)Microscopic scale characterization and modeling of transistor degradation under HC stress., , , , , , , and . Microelectron. Reliab., 52 (11): 2513-2520 (2012)Statistical measurements and Monte-Carlo simulations of DCR in SPADs., , , , , , , , , and 2 other author(s). ESSCIRC, page 193-196. IEEE, (2022)Integration of SPAD in 28nm FDSOI CMOS technology., , , , , , , , and . ESSDERC, page 82-85. IEEE, (2018)A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD., , , , , , , and . ESSDERC, page 424-427. IEEE, (2016)Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study., , , , , , , , , and 2 other author(s). ESSCIRC, page 143-146. IEEE, (2021)The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies., , , , , , , , and . ESSDERC, page 254-257. IEEE, (2014)Comprehensive modeling and characterization of Photon Detection Efficiency and Jitter in advanced SPAD devices., , , , , , , , , and 3 other author(s). ESSDERC, page 271-274. IEEE, (2021)Semi-Empirical model for optical properties of Si1-xGex alloys accounting for strain and temperature., , , , , , , , and . ESSDERC, page 267-270. IEEE, (2021)