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A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances.

, , , , , , , and . ASICON, page 1-4. IEEE, (2021)

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A Novel 1200-V Class SiC MOSFET With Schottky Barrier Diode for Improved third quadrant performance., , , , , and . ASICON, page 1-4. IEEE, (2023)A Novel Trench MOSFET with p-Pillar and RSO Accumulation Layer for Improved Performance., , , , , and . ASICON, page 1-4. IEEE, (2021)A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances., , , , , , , and . ASICON, page 1-4. IEEE, (2021)A Low On-state Voltage and Large Current Capability Thin SOI-LIGBT with Trench NMOS., , and . ASICON, page 1-4. IEEE, (2019)A Vertical Thin Layer pLDMOS with Linear doping realizing ultralow Ron, sp., , , , , and . ASICON, page 1-4. IEEE, (2021)Simulation Study of Trench IGBT with Diode-Clamped P-Well for High dI/dt and dV/dt Controllability., , , and . ASICON, page 1-4. IEEE, (2019)A New Ga2O3 Trench Schottky Barrier Diode with Improved Forward Conduction Characteristics., , , , , , , and . ASICON, page 1-4. IEEE, (2021)Simulation Study on Novel High Voltage Transient Voltage Suppression Diodes., , , , , and . ASICON, page 1-4. IEEE, (2019)A Novel SiC Superjunction Trench MOSFET with Integrated Heterojunction Diode for Improved Performance., , , , , and . ASICON, page 1-4. IEEE, (2023)Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction., , , , , , , and . ASICON, page 1-4. IEEE, (2023)