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Disambiguation of "Torres, A."

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Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT.

, , , , , , , , , , , and . IRPS, page 1-6. IEEE, (2019)

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Luis Torres

Törres Viland

Edmanuel Torres

Serge Torres

Armando Torres

 

Other publications of authors with the same name

Numerical solution using radial basis functions for multidimensional fractional partial differential equations of type Black-Scholes., , and . CoRR, (2020)Interactive presentation: Novel test infrastructure and methodology used for accelerated bring-up and in-system characterization of the multi-gigahertz interfaces on the cell processor., , and . DATE, page 725-730. EDA Consortium, San Jose, CA, USA, (2007)Climatologies of NOx and NOy: A comparison of data and models, , , , , , , , , and 14 other author(s). Atmospheric Environment, 31 (12): 1851--1904 (June 1997)Wu835 Times Cited:83 Cited References Count:176.Influence of early stimulation in cerebral palsy, , , , , , and . Rev Neurol, 31 (8): 716--719 (2000)Fast and efficient simulation of 3D creeping flow in ducts using a space-marching algorithm, , , , and . Polymer Engineering & Science, 45 (3): 249--259 (March 2005)A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , and . IRPS, page 4. IEEE, (2018)Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT., , , , , , , , , and 2 other author(s). IRPS, page 1-6. IEEE, (2019)Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below., , , , , , , , , and 21 other author(s). ESSCIRC, page 88-91. IEEE, (2009)Sulphide oxidation and carbonate dissolution as a source of CO2 over geological timescales, , and . Nature, (March 2014)Doping effect on the physical properties of zinc oxide thin films., , , , and . CCE, page 1-5. IEEE, (2012)