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Disambiguation of "Gaillard, Fred"

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A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT.

, , , , , , , , and . IRPS, page 4. IEEE, (2018)

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Guillaume Gaillard

Yves Gaillard

René Gaillard

Teresa Gaillard

François Gaillard

 

Other publications of authors with the same name

BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations., , , , , , , and . IRPS, page 1-5. IEEE, (2021)A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles., , , , , , , , , and 6 other author(s). IRPS, page 4. IEEE, (2024)16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors., , , , , , , , , and 20 other author(s). IMW, page 1-4. IEEE, (2021)Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface., , , , , , , , , and 5 other author(s). ESSDERC, page 295-298. IEEE, (2021)Ultra-fast CV methods (< 10µs) for interface trap spectroscopy and BTI reliability characterization using MOS capacitors., , , , , , , , and . IRPS, page 3. IEEE, (2022)Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K., , , , , , , , , and . IRPS, page 7. IEEE, (2022)A new method for quickly evaluating reversible and permanent components of the BTI degradation., , , , , , , and . IRPS, page 6-1. IEEE, (2018)Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT., , , , , , , , , and 2 other author(s). IRPS, page 1-6. IEEE, (2019)Performance & reliability of 3D architectures (πfet, Finfet, Ωfet)., , , , , , , , , and . IRPS, page 6. IEEE, (2018)Study of forward AC stress degradation of GaN-on-Si Schottky diodes., , , , , , and . Microelectron. Reliab., (2018)