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A Single-Channel, 600-MS/s, 12-b, Ringamp-Based Pipelined ADC in 28-nm CMOS.

J. Lagos, B. Hershberg, E. Martens, P. Wambacq, и J. Craninckx. IEEE J. Solid State Circuits, 54 (2): 403-416 (2019)

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Ewout Martens

Moritz Martens

Establishing properties of interaction systemsM. Martens. Uni Mannheim, (2009)

Robert Martens

Theodor Martens

Hans Martens

Другие публикации лиц с тем же именем

A 4-GS/s 10-ENOB 75-mW Ringamp ADC in 16-nm CMOS With Background Monitoring of Distortion.B. Hershberg, D. Dermit, B. van Liempd, E. Martens, N. Markulic, J. Lagos, и J. Craninckx. IEEE J. Solid State Circuits, 56 (8): 2360-2374 (2021)Automated synthesis of complex analog circuits.G. Gielen, T. Eeckelaert, E. Martens, и T. McConaghy. ECCTD, стр. 20-23. IEEE, (2007)A 47.5MHz BW 4.7mW 67dB SNDR Ringamp Based Discrete-Time Delta Sigma ADC.L. Santana, E. Martens, J. Lagos, B. Hershberg, P. Wambacq, и J. Craninckx. ESSCIRC, стр. 207-210. IEEE, (2021)22.5 A 42GS/s 7b 16nm Massively Time-Interleaved Slope-ADC.E. Martens, A. Cooman, P. Renukaswamy, S. Nagata, S. Park, J. Lagos, N. Markulic, и J. Craninckx. ISSCC, стр. 396-398. IEEE, (2024)Calibration Techniques for Optimizing Performance of High-Speed ADCs.E. Martens, N. Markulic, J. Lagos-Benites, и J. Craninckx. CICC, стр. 1-8. IEEE, (2023)A 1-GS/s, 12-b, Single-Channel Pipelined ADC With Dead-Zone-Degenerated Ring Amplifiers.J. Lagos, B. Hershberg, E. Martens, P. Wambacq, и J. Craninckx. IEEE J. Solid State Circuits, 54 (3): 646-658 (2019)A 70MHz Bandwidth Time-Interleaved Noise-Shaping SAR Assisted Delta Sigma ADC with Digital Cross-Coupling in 28nm CMOS.L. Santana, E. Martens, J. Lagos, P. Wambacq, и J. Craninckx. ESSCIRC, стр. 389-392. IEEE, (2023)A 3.2GS/s 10 ENOB 61mW Ringamp ADC in 16nm with Background Monitoring of Distortion.B. Hershberg, D. Dermit, B. van Liempd, E. Martens, N. Markulic, J. Lagos, и J. Craninckx. ISSCC, стр. 58-60. IEEE, (2019)16.3 A Single-Channel 5.5mW 3.3GS/s 6b Fully Dynamic Pipelined ADC with Post-Amplification Residue Generation.Z. Zheng, L. Wei, J. Lagos, E. Martens, Y. Zhu, C. Chan, J. Craninckx, и R. Martins. ISSCC, стр. 254-256. IEEE, (2020)A 0.7-1.15GHz complementary common-gate LNA in 0.18μm SOI CMOS with +15dBm IIP3 and >1kV HBM ESD protection.B. van Liempd, S. Ariumi, E. Martens, S. Chen, P. Wambacq, и J. Craninckx. ESSCIRC, стр. 164-167. IEEE, (2015)

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