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3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs., , , , , , , , и . VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)AC-1: a clock-powered microprocessor., , , , , , , и . ISLPED, стр. 328-333. ACM, (1997)An Experience of Using FDOOA Method to Develop a Telecommunications Network Management System., , и . TOOLS (24), стр. 320-329. IEEE Computer Society, (1997)Mobility Enhancement and Reliability Characterization of Back-Channel-Etch Amorphous InGaZnO TFT with Double Layers., , , , и . DRC, стр. 1-2. IEEE, (2020)First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61mV/dec, Ioff<10-7 μA/μm, DIBL =44mV/V, Positive VT, and Process Temp. of 300 °C., , , , , и . VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations., , , , , , , , , и . VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)Energy-recovery CMOS for highly pipelined DSP designs., , и . ISLPED, стр. 101-104. IEEE, (1996)A new GaAs switching device with double-confinement-collector structure, и . Sol.~State El., (1992)APER-2: A Developer-centered, Object-oriented Process Language., , и . ISMSE, стр. 297-303. IEEE Computer Society, (2000)Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array., , , , , , , , , и 6 other автор(ы). VLSI Technology and Circuits, стр. 361-362. IEEE, (2022)