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Disambiguation of "Chaudhuri, Rajarshi Roy"

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On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs.

, , , , , , , , , , and . IRPS, page 1-5. IEEE, (2024)

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Rajarshi Ray

Nondini Chaudhuri

Mitochondriale Bildung von reaktiven Sauerstoffspezies in Abhängigkeit vom Sauerstoffpartialdruck und der mitochondrialen Aktivität. Uni Heidelberg, (2010)

Manis Chaudhuri

Indronil Chaudhuri

Bidisha Chaudhuri

 

Other publications of authors with the same name

Noise Analysis-Resonant Frequency-Based Combined Approach for Concomitant Detection of Unknown Vapor Type and Concentration., , and . IEEE Trans. Instrumentation and Measurement, 68 (8): 3004-3011 (2019)Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs., , , , , and . IRPS, page 1-6. IEEE, (2024)Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences., , , , , , , and . IRPS, page 1-5. IEEE, (2023)Electric Field Coupled Molecular Dynamic Insights into Anisotropic Reliability Issues of Monolayer MoS2 Based 2D FETs., , , , , , , and . IRPS, page 1-4. IEEE, (2024)Physical Insights into the DC and Transient Reverse Bias Reliability of β-Ga2O3 Based Vertical Schottky Barrier Diodes., , , , and . IRPS, page 1-4. IEEE, (2023)Hierarchical MnO2 Nanoflowers Based Efficient Room Temperature Alcohol Sensor., , , and . IEEE SENSORS, page 1-4. IEEE, (2018)On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs., , , , , , , , , and 1 other author(s). IRPS, page 1-5. IEEE, (2024)Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs., , , , , , , , and . IRPS, page 1-4. IEEE, (2023)Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs., , , , , and . IRPS, page 1-6. IEEE, (2023)Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETs., , , , , , and . IRPS, page 74. IEEE, (2024)