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On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs.

, , , , , , , , , , and . IRPS, page 1-5. IEEE, (2024)

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Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer., , , and . IRPS, page 1-4. IEEE, (2023)On the Root Cause of Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs., , , , , and . IRPS, page 1-4. IEEE, (2020)Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs., , , , , and . IRPS, page 1-6. IEEE, (2024)Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences., , , , , , , and . IRPS, page 1-5. IEEE, (2023)Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs., , , , , and . IRPS, page 1-6. IEEE, (2023)Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs., , , , , , , , and . IRPS, page 1-4. IEEE, (2023)On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs., , , , , , , , , and 1 other author(s). IRPS, page 1-5. IEEE, (2024)Physical Insights into the DC and Transient Reverse Bias Reliability of β-Ga2O3 Based Vertical Schottky Barrier Diodes., , , , and . IRPS, page 1-4. IEEE, (2023)UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage & Gate Leakage Instabilities., , , , , and . IRPS, page 1-5. IEEE, (2019)