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Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation.

L. Zhou, J. Li, Z. Qiao, P. Ren, Z. Sun, J. Wang, B. Wu, Z. Ji, R. Wang, K. Cao, and R. Huang. IRPS, page 1-10. IEEE, (2023)

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Zhou Zhou

Zhou Zhao

Jun Zhou

Other publications of authors with the same name

Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs.H. Chang, L. Zhou, H. Yang, Z. Ji, Q. Liu, E. Simoen, H. Yin, and W. Wang. IRPS, page 1-5. IEEE, (2021)Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies.D. Wang, Y. Liu, P. Ren, L. Zhou, Z. Ji, J. Liu, R. Wang, and R. Huang. IRPS, page 7. IEEE, (2022)Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs.L. Zhou, Q. Zhang, H. Yang, Z. Ji, Z. Zhang, R. Xu, H. Yin, and W. Wang. IRPS, page 1-6. IEEE, (2020)Convolution-Based Vth Shift Prediction and the New 9T2C Pixel Circuit in LTPS TFT AMOLED.S. Xia, L. Zhou, K. Wang, X. Fan, Y. Xue, Q. Shan, H. Wang, P. Ren, Z. Ji, and R. Huang. IRPS, page 1-7. IEEE, (2024)New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology.Y. Liu, P. Ren, D. Wang, L. Zhou, Z. Ji, J. Liu, R. Wang, and R. Huang. IRPS, page 6. IEEE, (2022)Understanding the Physical Mechanism of RowPress at the Device-Level in Sub-20 nm DRAM.L. Zhou, J. Li, P. Ren, S. Ye, D. Wang, Z. Qiao, and Z. Ji. IRPS, page 1-6. IEEE, (2024)A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs.L. Zhou, Z. Zhang, H. Yang, Z. Ji, Q. Liu, Q. Zhang, E. Simoen, H. Yin, J. Luo, A. Du and 2 other author(s). IRPS, page 1-7. IEEE, (2021)Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation.L. Zhou, J. Li, Z. Qiao, P. Ren, Z. Sun, J. Wang, B. Wu, Z. Ji, R. Wang, K. Cao and 1 other author(s). IRPS, page 1-10. IEEE, (2023)

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Disambiguation of "Zhou, Longda"

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Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation.

Please choose a person to relate this publication to

Zhou Zhou

Zhou Zhou

Zhou Zhao

Jun Zhou

Jun Zhou

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Zhou, Longda"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation.

Please choose a person to relate this publication to

Zhou Zhou

Zhou Zhou

Zhou Zhao

Jun Zhou

Jun Zhou

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
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APA
Chicago
DIN 1505
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Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation.