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A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs.

, , , , , , , , , , , и . IRPS, стр. 1-7. IEEE, (2021)

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Zhou Zhou

Zhou Zhou

Rui Zhou

Yaming Zhou

Xianzhong Zhou

 

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Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs., , , , , , , и . IRPS, стр. 1-5. IEEE, (2021)Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies., , , , , , , и . IRPS, стр. 7. IEEE, (2022)Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs., , , , , , , и . IRPS, стр. 1-6. IEEE, (2020)Convolution-Based Vth Shift Prediction and the New 9T2C Pixel Circuit in LTPS TFT AMOLED., , , , , , , , , и . IRPS, стр. 1-7. IEEE, (2024)New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology., , , , , , , и . IRPS, стр. 6. IEEE, (2022)Understanding the Physical Mechanism of RowPress at the Device-Level in Sub-20 nm DRAM., , , , , , и . IRPS, стр. 1-6. IEEE, (2024)A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs., , , , , , , , , и 2 other автор(ы). IRPS, стр. 1-7. IEEE, (2021)Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation., , , , , , , , , и 1 other автор(ы). IRPS, стр. 1-10. IEEE, (2023)