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Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents., , , , , , , and . IMW, page 1-4. IEEE, (2022)Self-rectifying non-volatile tunneling synapse: multiscale modeling augmented development., , , , , , , , , and 6 other author(s). IMW, page 1-4. IEEE, (2024)Characterization and Multiscale Modeling of TDDB in State-of-the-art BEOL., , , , , , , , , and 15 other author(s). IRPS, page 10. IEEE, (2024)Gate stack engineering for emerging polarization based non-volatile memories.. Dresden University of Technology, Germany, (2017)Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories., , , , , , , and . ESSDERC, page 160-163. IEEE, (2017)Electron-assisted switching in FeFETs: Memory window dynamics - retention - trapping mechanisms and correlation., , , , , and . IRPS, page 4. IEEE, (2022)The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging., , , and . IRPS, page 1-6. IEEE, (2023)Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers., , , , , , , and . IRPS, page 1-8. IEEE, (2019)Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors., , , , , and . DRC, page 51-52. IEEE, (2019)Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM., , , , , and . NVMTS, page 1-4. IEEE, (2017)