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MOSFET Characterization with Reduced Supply Voltage at Low Temperatures for Power Efficiency Maximization.

, , , , , , , , , , , , and . ESSDERC, page 9-12. IEEE, (2023)

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6-T SRAM performance assessment with stacked silicon nanowire MOSFETs., , , and . ISQED, page 610-614. IEEE, (2015)Speed Optimization of Vertically Stacked Gate-All-Around MOSFETs with Inner Spacers for Low Power and Ultra-Low Power Applications., , and . ISQED, page 231-234. IEEE, (2019)Design issues and insights of multi-fin bulk silicon FinFETs., and . ISQED, page 723-726. IEEE, (2012)MOSFET Characterization with Reduced Supply Voltage at Low Temperatures for Power Efficiency Maximization., , , , , , , , , and 3 other author(s). ESSDERC, page 9-12. IEEE, (2023)Body-biasing assisted vmin optimization for 5nm-node multi-Vt FD-SOI 6T-SRAM., , , , and . ISQED, page 151-155. IEEE, (2018)Assessment of structure variation in silicon nanowire FETs and impact on SRAM., , , and . Microelectron. J., 43 (5): 300-304 (2012)How Fault-Tolerant Quantum Computing Benefits from Cryo-CMOS Technology., , , , , , , , , and 19 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)Back-Bias Modulated UTBB SOI for System-on-Chip I/O Cells., , and . ISQED, page 311. IEEE, (2021)Performance evaluation of stacked gate-all-around MOSFETs at 7 and 10 nm technology nodes., and . ISQED, page 169-172. IEEE, (2016)An area efficient low-voltage 6-T SRAM cell using stacked silicon nanowires., , , and . ICICDT, page 117-120. IEEE, (2018)