High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain.
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Disambiguation
The disambiguation is part of the BibSonomy genealogy project and is used to link unassigned publications to an existing person. You see the referenced publication of the author "Han, Yi", a list of already existing persons with the same author-name, and if available, other publications associated to them. Now you have the option to assign this publication to a person or create a new one.