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Drain.

Y. Han, J. Sun, J. Bae, D. Grützmacher, J. Knoch, and Q. Zhao. VLSI Technology and Circuits, page 1-2. IEEE, (2023)

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Detlev Grützmacher

Curt Grützmacher

Jens Grützmacher

Huberta Grützmacher

Malte Grützmacher

Other publications of authors with the same name

Bi1Te1 is a dual topological insulatorM. Eschbach, M. Lanius, C. Niu, E. Młyńczak, P. Gospodarič, J. Kellner, P. Schüffelgen, M. Gehlmann, S. Döring, E. Neumann and 8 other author(s). Nature Communications, (April 2017)Hybrid Nanorobotic Approaches for Fabricating NEMS from 3D Helical Nanostructures.L. Dong, L. Zhang, D. Bell, B. Nelson, and D. Grützmacher. ICRA, page 1396-1401. IEEE, (2006)NEUROTEC I: Neuro-inspired Artificial Intelligence Technologies for the Electronics of the Future.M. Galicia, S. Menzel, F. Merchant, M. Müller, H. Chen, Q. Zhao, F. Cüppers, A. Jalil, Q. Shu, P. Schüffelgen and 23 other author(s). DATE, page 957-962. IEEE, (2022)Ferroelectric Schottky Barrier MOSFET as Analog Synapses for Neuromorphic Computing.F. Xi, A. Grenmy, J. Zhang, Y. Han, J. Bae, D. Grützmacher, and Q. Zhao. ESSCIRC, page 121-124. IEEE, (2022)High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain.Y. Han, J. Sun, J. Bae, D. Grützmacher, J. Knoch, and Q. Zhao. VLSI Technology and Circuits, page 1-2. IEEE, (2023)GeSn Vertical Gate-all-around Nanowire n-type MOSFETs.Y. Junk, M. Frauenrath, Y. Han, O. Diaz, J. Bae, J. Hartmann, D. Grützmacher, D. Buca, and Q. Zhao. ESSDERC, page 364-367. IEEE, (2022)4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses.F. Xi, Y. Han, A. Tiedemann, D. Grützmacher, and Q. Zhao. ESSDERC, page 291-294. IEEE, (2021)Manipulating InAs nanowires with submicrometer precisionK. Flöhr, M. Liebmann, K. Sladek, H. Günel, R. Frielinghaus, F. Haas, C. Meyer, H. Hardtdegen, T. Schäpers, D. Grützmacher and 1 other author(s). Review of Scientific Instruments, 82 (11): - (2011)Tuning the Dirac point to the Fermi level in the ternary topological insulator (Bi1−xSbx)2Te3J. Kellner, M. Eschbach, J. Kampmeier, M. Lanius, E. Młyńczak, G. Mussler, B. Holländer, L. Plucinski, M. Liebmann, D. Grützmacher and 2 other author(s). Applied Physics Letters, 107 (25): 251603 (2015)Realization of a vertical topological p-n junction in epitaxial Sb2Te3/Bi2Te3 heterostructuresM. Eschbach, E. Mlynczak, J. Kellner, J. Kampmeier, M. Lanius, E. Neumann, C. Weyrich, M. Gehlmann, P. Gospodaric, S. Doring and 10 other author(s). Nat Commun, (November 2015)

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Disambiguation of "Grützmacher, Detlev"