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Fully balanced low-noise transconductance amplifiers with P1dB > 0dBm in 45nm CMOS., , and . ESSCIRC, page 231-234. IEEE, (2011)A flip-chip-packaged 1.8V 28dBm class-AB power amplifier with shielded concentric transformers in 32nm SoC CMOS., , , , and . ISSCC, page 426-428. IEEE, (2011)A 10 GHz low phase noise VCO employing current reuse and capacitive power combining., , , and . CICC, page 1-4. IEEE, (2010)A 5 GHz class-AB power amplifier in 90 nm CMOS with digitally-assisted AM-PM correction., , , , , , , and . CICC, page 813-816. IEEE, (2005)A 5 GHz, 21 dBm output-IP3 resistive feedback LNA in 90-nm CMOS., , , and . ESSCIRC, page 372-375. IEEE, (2007)A Class-G Supply Modulator and Class-E PA in 130 nm CMOS., , and . IEEE J. Solid State Circuits, 44 (9): 2339-2347 (2009)A GaAs MESFET Schottky diode barrier height reference circuit.. IEEE J. Solid State Circuits, 32 (11): 2023-2029 (1997)A 2.5GHz 32nm 0.35mm2 3.5dB NF -5dBm P1dB fully differential CMOS push-pull LNA with integrated 34dBm T/R switch and ESD protection., , , and . ISSCC, page 56-58. IEEE, (2011)A 5GHz resistive-feedback CMOS LNA for low-cost multi-standard applications., and . ISSCC, page 721-730. IEEE, (2006)A 5GHz 108Mb/s 2x2 MIMO Transceiver with Fully Integrated +16dBm PAs in 90nm CMOS., , , , , , , , , and 1 other author(s). ISSCC, page 1420-1429. IEEE, (2006)