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Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states.

, , , , , , , , , , and . DRC, page 1-2. IEEE, (2022)

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High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor., , , , , and . ESSCIRC, page 87-90. IEEE, (2021)A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory., , , , , , , , and . IMW, page 1-4. IEEE, (2021)Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states., , , , , , , , , and 1 other author(s). DRC, page 1-2. IEEE, (2022)Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights., , , , , , , , , and 1 other author(s). Neuromorph. Comput. Eng., 2 (2): 24001 (2022)Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer on the Switching Properties of Bilayer TaOx/HfOx ReRAM., , , , , , , , , and . ESSDERC, page 297-300. IEEE, (2022)Lithium-niobate-based narrow-linewidth frequency agile integrated lasers with petahertz frequency tuning rate., , , , , , , , , and 6 other author(s). OFC, page 1-2. IEEE, (2023)Heterogeneous Co-Integration of BTO/Si and III-V Technology on a Silicon Photonics Platform., , , , , , , , , and . OFC, page 1-3. IEEE, (2020)Microstructure and ferroelectricity of barium titanate thin films on Si for integrated photonics., , , , , , , , and . ICICDT, page 1-2. IEEE, (2017)