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Analysis of Body Bias and RTN-Induced Frequency Shift of Low Voltage Ring Oscillators in FDSOI Technology., , , , , , , , , and 2 other author(s). PATMOS, page 82-87. IEEE, (2018)Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures., , , , , , , , , and 1 other author(s). Microelectron. Reliab., 52 (9-10): 2110-2114 (2012)Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale., , , , , and . Microelectron. Reliab., 49 (9-11): 1188-1191 (2009)Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale., , , and . Microelectron. Reliab., 45 (9-11): 1390-1393 (2005)Threshold voltage and on-current Variability related to interface traps spatial distribution., , , , , , , , and . ESSDERC, page 230-233. IEEE, (2015)Threading dislocations in III-V semiconductors: Analysis of electrical conduction., , , , , , , , , and . IRPS, page 4. IEEE, (2015)