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A novel approach to characterization of progressive breakdown in high-k/metal gate stacks., , , , , , , , и . Microelectron. Reliab., 48 (11-12): 1759-1764 (2008)Line Resistance Impact in Memristor-based Multi Layer Perceptron for Pattern Recognition., , , , , и . LASCAS, стр. 1-4. IEEE, (2021)Diagnose of radiation induced single event effects in a PLL using a heavy ion microbeam., , , , , , , , и . LATW, стр. 1-5. IEEE Computer Society, (2013)Heavy Ion Microbeam Experimental Study of ASET on a Full-Custom CMOS OpAmp., , , , , , , и . SBCCI, стр. 1-5. IEEE, (2018)Impact of forming gas annealing on the degradation dynamics of Ge-based MOS stacks., , , , , и . IRPS, стр. 3-1. IEEE, (2018)Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity., , , , , , и . IRPS, стр. 6-1. IEEE, (2018)General features of progressive breakdown in gate oxides: A compact model., , и . IRPS, стр. 5. IEEE, (2015)Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms., , , , , , , , , и 1 other автор(ы). IRPS, стр. 1-8. IEEE, (2019)A dual core low power microcontroller with openMSP430 architecture for high reliability lockstep applications using a 180 nm high voltage technology node., , , , и . LASCAS, стр. 1-4. IEEE, (2013)Radiation damage characterization of digital integrated circuits., , , , , и . LATW, стр. 1-5. IEEE, (2009)