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Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity.

, , , , , , and . IRPS, page 6-1. IEEE, (2018)

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Reversible dielectric breakdown in h-BN stacks: a statistical study of the switching voltages., , , , , , , , , and 3 other author(s). IRPS, page 1-5. IEEE, (2020)Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity., , , , , , and . IRPS, page 6-1. IEEE, (2018)Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale., , , , , and . Microelectron. Reliab., 49 (9-11): 1188-1191 (2009)Variability in Resistive Memories., , , , , , , , , and 10 other author(s). Adv. Intell. Syst., (June 2023)Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks., , , , , , , , and . IRPS, page 1-5. IEEE, (2020)Equivalent circuit model for the electron transport in 2D resistive switching material systems., , , , , and . ESSDERC, page 86-89. IEEE, (2017)2021 Roadmap on Neuromorphic Computing and Engineering., , , , , , , , , and 46 other author(s). CoRR, (2021)Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures., , , , , , , , , and 1 other author(s). Microelectron. Reliab., 52 (9-10): 2110-2114 (2012)Time series modeling of the cycle-to-cycle variability in h-BN based memristors., , , , , , , , and . IRPS, page 1-5. IEEE, (2021)Tristate Resistive Switching in Heterogenous Van Der Waals Dielectric Structures., , , , , , , , , and . IRPS, page 1-6. IEEE, (2019)